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semiconductor today : the first choice of magazine for professionals who demand timely, focused, top-quality coverage of the compound semiconductor industry. free registration home news archive features directory recruitment events about us advertising contribute media kit 2018 download full information about advertising options with semiconductor today can be found by clicking here, or for easy printing, pdf versions are available using the links below: download usd media kit pdf (1.8mb) download euro media kit pdf (1.8mb) download £ sterling media kit pdf (1.8mb) headline news 14 june 2018 ntt and tokyo institute of technology develop ic allowing 100gbps wireless transmission in 300ghz band future development using multiple carrier wavelengths aims to open up terahertz frequencies 13 june 2018 plasma-therm acquires corial acquisition enhances plasmatherm’s support infrastructure for european customer base 13 june 2018 win releases platform integrating 0.1µm gaas phemts with monolithic pin and vertical schottky diodes combination provides power and low-noise applications with on-chip limiters, detectors, mixers, pin switch and esd protection 8 june 2018 expanding the application potential of hydride vapor phase epitaxy researchers see growth technique as offering lower silicon doping for power device applications. 8 june 2018 win expands gan power process capabilities to 0.45µm-gate technology for 5g applications np45-11 process provides 50v operation with superior power density and efficiency 8 june 2018 cree announces cfo transition plan executive vp & cfo mcdevitt to retire upon appointment of successor 7 june 2018 aluminium indium nitride as interlayer for green-emitting multi-quantum wells photoluminescence increased up to seven fold over conventional structures. 7 june 2018 visic raises $10m to expand gan power device portfolio and address more market segments firm to increase technical support team to assist growing worldwide customer base 5 june 2018 transphorm’s new gen iii gan power conversion platform increases noise immunity and reduces switching noise first gan fet with 4v threshold and new power system development methods result from field experience 4 june 2018 rohm plans new building at apollo plant to expand silicon carbide production capacity construction to begin in february 2019 and be completed by end-2020 4 june 2018 rohm and gan systems collaborate on gallium nitride power semiconductors firms to co-develop form-, fit- and function-compatible products using gan dies in both gan systems’ ganpx packaging and rohm’s power semiconductor packaging 1 june 2018 lasertel’s parent firm leonardo commits to $5m capital investment funding to increase pump module manufacturing capacity for directed-energy programs and boost development of high-power lasers for lidar and material processing 30 may 2018 room-temperature photoluminescence from iii-iv-v semiconductor alloys mit researchers claim first high-quality material grown by metal-organic chemical vapor deposition. news features 13 june 2018 gallium nitride tunnel junctions from pure mocvd process for vcsels researchers seek to improve current-spreading layers. other news & products 15 june 2018 solar-tectic granted us patents for perovskite thin-film solar cells 15 june 2018 bluglass raises aus$2m after completing share purchase plan 14 june 2018 semigen announces new foundry capabilities and hi-rel screening services 14 june 2018 guerrilla rf launches low-current lnas/linear drivers with integrated bypass as its first ingap hbt-based products 14 june 2018 macom launches wideband double-balanced mixers for high-performance test & measurement, microwave radio and radar applications 13 june 2018 aledia chooses veeco’s propel gan mocvd system for large-wafer 3d led production 13 june 2018 kaiam launches enhanced 100g ‘cwdm4+’ lightscale2 transceivers for higher performance and reliability than standard cwdm4 13 june 2018 nxp adds high-power gan rf and si-ldmos products for 5g cellular networks 13 june 2018 psemi launches gan fet driver for solid-state lidar 13 june 2018 macom launches power detector operating from 5–44ghz, supporting high dynamic range of 30db 13 june 2018 macom adds broadband spdt switches covering dc–26.5ghz and 17.7–31ghz 12 june 2018 qorvo adds power amplifiers and front-end modules for massive mimo and 5g base stations 12 june 2018 qorvo launches ultra-compact gan x-band fems for radar applications 12 june 2018 macom launches high-linearity gaas-based power amplifiers for ka-band satcom and vsat 12 june 2018 analog devices adds 200mhz-bandwidth rf transceiver to speed development of 2g-5g base-stations and phased-array radar 11 june 2018 integra showcasing new rf power devices at ims 2018 11 june 2018 custom mmic launches gaas and gan mmics at ims 2018 11 june 2018 emcore announces test results of obi-mitigated l-eml rfog onu transceiver 7 june 2018 axus adds senior process engineer & account manager features 30 april 2018 widening the prospects for gallium oxide power electronics mike cooke reports on research on gallium oxide as a wider-bandgap semiconductor than gallium nitride and silicon carbide. 30 april 2018 inas-channel transistors for millimeter-wave and high-speed applications researchers achieve record 420ghz maximum oscillation and 410ghz/357ghz maximum oscillation/cut-off frequency balance. 30 april 2018 tunneling to green light emission with improved efficiency performance researchers combine mocvd and mbe to create leds with gallium nitride tunnel-junction contacts. 30 april 2018 silicon hole injector for deep ultraviolet algan diodes devices fabricated with 229nm emission wavelength and 160μw output power. 30 april 2018 near-ultraviolet algan laser diode on silicon researchers in china have claimed the first observation of room-temperature electrically injected lasing in an aluminium gallium nitride near-uv laser on silicon. 30 april 2018 silicon photonics reaches tipping point, with transceivers shipping in volume market to boom for 100g then 400g, with 200g a parallel intermediate step. sponsored features sensing perfection - protecting the most sensitive equipment for high-end technology. abb’s high fault rating makes circuit protection easy abb enters mega-ups market abb provides power protection to hhgrace in china demand for chip-based products - abb's solutions for the semiconductor industry abb has supplied close to 700 mva of power protection to the semiconductor industry abb improving power quality for the semiconductor industry abb's new pcs100 active voltage conditioner 400 v series recruitment ©2006-2018 juno publishing and media solutions ltd. all rights reserved. semiconductor today and the editorial material contained within it and related media is the copyright of juno publishing and media solutions ltd. reproduction in whole or part without permission from juno publishing and media solutions ltd is forbidden. in most cases, permission will be granted, if the magazine and publisher are acknowledged. disclaimer: material published within semiconductor today and related media does not necessarily reflect the views of the publisher or staff. juno publishing and media solutions ltd and its staff accept no responsibility for opinions expressed, editorial errors and damage/injury to property or persons as a result of material published. semiconductor today, juno publishing and media solutions ltd, suite no. 133, 20 winchcombe street, cheltenham, gl52 2ly, uk view our privacy, cookie and data protection policy web site by no name no slogan

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Domain Name: SEMICONDUCTOR-TODAY.COM
Registry Domain ID: 286049487_DOMAIN_COM-VRSN
Registrar WHOIS Server: whois.123-reg.co.uk
Registrar URL: http://www.meshdigital.com
Updated Date: 2013-02-11T10:18:29Z
Creation Date: 2005-12-14T23:01:37Z
Registry Expiry Date: 2018-12-14T23:01:37Z
Registrar: 123-Reg Limited
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Domain Status: ok https://icann.org/epp#ok
Name Server: NS.123-REG.CO.UK
Name Server: NS2.123-REG.CO.UK
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